photomultiplier tube R13096 figure 3: typical spectral response tpmsb0254ea figure 1: uniformity area figure 2: sn ratio comparison (simulation) -10 (mm) (mm) -8 0 20 40 60 80 100 -6 -4 -2 0 020406080100 2 6 -6 0 -12 anode relative output (%) anode relative output (%) R13096 r3896 photocathode test conditions supply voltage: 750 v light size : 1 mm slit wavelength : 420 nm fwhm about 2 times fwhm about 2 times tpmsb0256ea tpmsb0257ea emission spectra 800 nm 30 nm r3896 R13096 700 0 10 20 30 40 50 60 70 80 90 100 750 800 wavelength (nm) cathode radiant sensitivity (ma/w) emission 850 900 diffused light r3896 R13096 r3896 R13096 r3896 R13096 the shot noise histogram of the shot noise time number of sample 1.4 times 100 10 1 0.1 0.01 100 200 300 400 500 600 700 800 900 1000 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) cathode radiant sensitivity quantum efficiency information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?015 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. features applications 2 wider sensitive area while maintaing equivalent qe (and gain) at conventional pmts. spectroscopy environmental monitoring chemiluminescence measurement biomedical analysis left: R13096, right: r3896
photomultiplier tube R13096 general maximum ratings (absolute maximum values) characteristlcs (at 25 c) notes a: b: c: d: e: averaged over any interval of 30 seconds maximum. the light source is a tungsten filament lamp operated at a distribution temperature of 2856 k. supply voltage is 100 v between the cathode and all other electrodes connected together as anode. red/white ratio is the quotient of the cathode current measured using a red filter (toshiba r-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as note b. the value is cathode output current when a blue filter (corning cs 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as note b. measured with the same light source as note b and with the voltage distribution ratio shown in table 1 below. electrodes k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p ratio 1 111111111 suppiy voltage: 1000 v, k: cathode, dy: dynode, p: anode table 1:voltage distribution ratio f: g: h: i: j: measured with the same supply voltage and voltage distribution ratio as note e after removal of light. the rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. in measurement, the whole photocathode is illuminated. also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times hysteresis is temporary instability in anode current after light and voltage are applied. (1)light hysteresis the tube is operated at 750 v with an anode current of 1 a for 5 minutes. the light is then removed from the tube for a minute. the tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)voltage hysteresis the tube is operated at 300 v with an anode current of 0.1 a for 5 minutes. the light is then removed from the tube and the supply voltage is quickly increased to 800 v. after a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. hysteresis = 100 (%) l max. l i l min. tpmsb0002ea time max. l min. l i l anode current 0 5 6 7 (minutes) value 1250 250 0.1 v v ma unit parameter supply voltage average anode current a typ. max. unit 100 % % % % % a/lm ma/w ma/w ma/w ma/w ma/w a/lm na ns ns ns % % 21 29 25 14 0.73 525 33 60 90 73 5.0 0.4 15 5000 9.5 10 6 20 2.2 22 1.2 0.5 1.0 min. quantum efficiency luminous b radiant red/white ratio c blue sensitivity index d luminous e anode pulse rise time g electron transit time h transit time spread (t.t.s.) i light hysteresis voltage hysteresis at 194 nm at 254 nm at 450 nm at 633 nm at 852 nm at 194 nm at 254 nm at 450 nm at 633 nm at 852 nm 475 3000 parameter cathode sensitivity anode sensitivity gain e anode dark current f (after 30 min storage in darkness) time response anode current stability j specifications between anode and cathode between anode and last dynode parameter description/value unit spectral response wavelength of maximum response photocathode window material dynode direct interelectrode capacitances base weight operating ambient temperature storage temperature suitabie socket suitabie socket assembly 185 to 900 450 multialkali 10 24 uv glass circular-cage 9 4 6 11-pin base jedec no. b11-88 approx. 45 -30 to +50 -30 to +50 e678?1a (sold separately) e717?3 (sold separately) nm nm mm pf pf g c c materiai minimum effective area structure number of stages anode to last dynode anode to all other electrodes
tpmsb0050eb tpmsb0051eb tpmsb0052eb tpmsb0053eb figure 4: typical temperature characteristics of dark current (at 1000 v, after 30 min storage in darkness) figure 5: anode luminous sensitivity and gain characteristics figure 6: typical time response figure 7: typical temperature coefficient of anode sensitivity 500 1000 700 1500 time (ns) supply voltage (v) 1 100 10 transit time rise time wavelength (nm) temperature coefficient ( c -1 ) 200 400 600 800 1000 +0.04 +0.01 -0.02 +0.03 +0.02 0 -0.01 -0.0013 -0.0025 500 700 1000 1500 gain anode luminous sensitivity (a/lm) 10 1 10 2 10 3 10 4 10 5 10 -1 10 0 supply voltage (v) 10 3 10 4 10 5 10 6 10 8 10 7 10 2 typical gain minimum anode sensitivity typical anode sensitivity 100 10 1 0.1 -20 0 +20 -30 -10 +10 +30 +50 +40 temperature ( c) anode dark current (na) 0.01
tpms1086e01 oct. 2015 ip photomultiplier tube R13096 hamamatsu photonics k.k. hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fax: (1)908-231-12 18 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, fa x: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, tele phone: (44)1707-294888, fax: (44)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: torshamnsgatan 35 se-164 40 kista, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e -mail: info@hamamatsu.se italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39)02-93581733, fax: (39)02-93581741 e-mail: info@hamamatsu.it china: hamamatsu photonics (china) co., ltd.: b1201 jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china , telephone: (86)10-6586-6006, fax: (86)10-6586-2866 e-mail: hpc@hamamatsu.com.cn figure 8: dimensional outline and basing diagram (unit: mm) figure 9: accessories (unit: mm) sold separately warning?ersonal safety hazards electrical shock operating voltages applied to this device present a shock hazard. tacca0002eh tpmsa0047ea tacca0064ea 33 5 49 3.5 38 29 4 18 * hamamatsu also provides c4900 series compact high voltage power supplies and c6270 series dp type socket assemblies which incor- porate a dc to dc converter type high voltage power supply. potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1 d type socket assembly e717-63 socket e678-11a 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 11 bottom view (basing diagram) 28.5 1.5 10 min. 2.5 0.5 2.5 0.5 photocathode 24 min. 49.0 2.5 80 max. 94 max. 32.2 0.5 11 pin base jedec no. b11-88
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